V23990-P430-F-PM final datasheet flowpack 1, 1200v 50 a v23990-p430-f-01-14 maximum ratings / h?chstzul?ssige werte parameter condition symbol datasheet values unit max. transistor inverter transistor wechselrichter collector-emitter break down voltage v ce 1200 v kollektor-emitter-sperrspannung dc collector current t j =150c t h =80c, i c 38 a kollektor-dauergleichstrom t c =80c 50 limited by bond repetitive peak collector current t p =1ms t h =80c i cpuls 76 a periodischer kollektorspitzenstrom power dissipation per igbt t j =150c t h =80c p tot 68 w verlustleistung pro igbt t c =80c 102 gate-emitter peak voltage v ge 20 v gate-emitter-spitzenspannung sc withstand time tj125c v ge =15v t sc 10 us kurzschlu?verhalten v cc 900 v diode inverter diode wechselrichter dc forward current t j =150c t h =80c, i f 26 a dauergleichstrom t c =80c 35,5 repetitive peak forward current t p =1ms t h =80c i frm 52 a periodischer spitzenstrom power dissipation per diode t j =150c t h =80c p tot 41 w verlustleistung pro diode t c =80c 62 thermal properties thermische eigenschaften max. chip temperature t j max 150 c max. chiptemperatur storage temperature t st g -40+125 c lagertemperatur operation temperature t o p -40+125 c betriebstemperatur insulation properties modulisolation insulation voltage t=1min v is 4000 vdc isolationsspannung creepage distance min 12,7 mm kriechstrecke clearance min 12,7 mm luftstrecke copyright by tyco electronics finsinger feld 1, d- 85521 ottobrunn power.switches@tycoelectronics.com copyright by vincotech revision:1
V23990-P430-F-PM final datasheet flowpack 1, 1200v 50a v23990-p430-f-01-14 characteristic values description symbol conditions datasheet values unit t(c) other conditions vge(v) vce(v) ic(a) if(a) (rgon-rgoff) vgs(v) vds(v) id(a) min typ max transistor inverter, inductive load transistor wechselrichte r gate emitter threshold voltage v ge(th) tj=25c vce=vge 0,002 5 5,8 6,5 v gate-schwellenspannung tj=125c collector-emitter saturation voltage v ce(sat) tj=25c 15 50 1,71 2,3 v kollektor-emitter s?ttigungsspannung tj=125c 15 50 1,95 collector-emitter cut-off i ces tj=25c 0 1200 0,4 ma kollektor-emitter reststrom tj=125c 6 gate-emitter leakage current i ges tj=25c 30 0 650 na gate-emitter reststrom tj=125c integrated gate resistor r gint 4 ohm integrirter gate widerstand turn-on delay time t d(on) tj=25c rgon=18 ohm ns einschaltverz?gerungszeit tj=125c rgoff=18 ohm 15 600 50 72 rise time t r tj=25c rgon=18 ohm ns anstiegszeit tj=125c rgoff=18 ohm 15 600 50 22 turn-off delay time t d(off) tj=25c rgon=18 ohm ns abschaltverz?gerungszeit tj=125c rgoff=18 ohm 15 600 50 462 fall time t f tj=25c rgon=18 ohm ns fallzeit tj=125c rgoff=18 ohm 15 600 50 182 turn-on energy loss per pulse e on tj=25c rgon=18 ohm mws einschaltverlustenergie pro puls tj=125c rgoff=18 ohm 15 600 50 4,87 turn-off energy loss per pulse e off tj=25c rgon=18 ohm mws abschaltverlustenergie pro puls tj=125c rgoff=18 ohm 15 600 50 5,12 input capacitance c ies tj=25c f=1mhz 3,6 nf eingangskapazit?t tj=125c output capacitance c oss tj=25c f=1mhz 0,18 nf ausgangskapazit?t tj=125c reverse transfer capacitance c rss tj=25c f=1mhz 0,16 nf rckwirkungskapazit?t tj=125c gate charge q gate tj=25c 280 nc gate ladung tj=125c thermal resistance chip to heatsink per chip r thjh 1,04 k/w w?rmewiderstand chip-khlk?rper pro chip 0,6864 coupled thermal resistance inverter diode-transistor r thjh 0,55 k/w gekoppelte w?rmewiderstand wechselrichter diode-transistor diode inverter diode wechselrichter diode forward voltage v f tj=25c 50 2,35 3,35 v durchla?spannung tj=125c 50 2,04 peak reverse recovery current i rm tj=25c rckstromspitze tj=125c rgon=18 ohm 15 600 50 109 reverse recovery time t rr tj=25c ns sperreverz?gerungszeit tj=125c rgon=18 ohm 15 600 50 60 reverse recovered charge q rr tj=25c uc sperrverz?gerungsladung tj=125c rgon=18 ohm 15 600 50 8,4 reverse recovered energy erec tj=25c mws sperrverz?gerungsenergie tj=125c rgon=18 ohm 15 600 50 2,97 thermal resistance chip to heatsink per chip r thjh 1,72 k/w w?rmewiderstand chip-khlk?rper pro chip 1,1352 coupled thermal resistance inverter transistor-diode r thjh 0,53 k/w gekoppelte w?rmewiderstand wechselrichter transistor-diode ntc-thermistor ntc-widerstand rated resistance r 25 tj=25c tol. 5% 4,46 4,7 4,94 kohm nennwiderstand deviation of r100 d r/r tc=100c r100= 435ohm 3 %/k abweichung von r100 power dissipation given epcos-typ p tj=25c 210 mw verlustleistung epcos-typ angeben b-value b (25/100) tj=25c tol. 3% 35 30 k b-wert thermal grease warmeleitpaste thermal grease thickness50um warmeleitpaste dicke 50um, = 0,61 w/mk thermal grease thickness50um warmeleitpaste dicke 50um, = 0,61 w/mk thermal grease thickness50um warmeleitpaste dicke50um, = 0,61 w/mk copyright by tyco electronics finsinger feld 1, d- 85521 ottobrunn power.switches@tycoelectronics.com copyright by vincotech revision:1
V23990-P430-F-PM final datasheet flowpack 1, 1200v, 50 a v23990-p430-f-01-1 4 output inverter figure 1. typical output characteristic s figure 2. typical output characteristic s output inverter igb t output inverter igb t ic= f(v ce ) ic= f(v ce ) parameter: tp = 250 us tj = 25 c parameter: tp = 250 us tj = 125 c v ge parameter: from: 7 v to 17 v v ge parameter: from: 7 v to 17 v in 1 v steps in 1 v steps figure 3. typical transfer characteristic s figure 4. typical diode forward current as output inverter igb t a function of forward voltag e ic= f(v ge ) output inverter fre d i f =f(v f ) parameter: tp = 250 us v ce = 10 v parameter: tp = 250 us 0 20 40 60 80 100 120 140 012345 v ce (v) ic (a) 0 10 20 30 40 50 60 70 80 024681 01 2 v ge (v) i c (a) 125 oc 25 oc 0 20 40 60 80 100 120 140 0 0,5 1 1,5 2 2,5 3 3,5 4 v f (v) i f (a) 25 oc 125 oc 0 20 40 60 80 100 120 140 012345 v ce (v) ic (a) copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn power.switches@tycoelectronics.com copyright by vincotech revision:1
V23990-P430-F-PM final datasheet flowpack 1, 1200v, 50 a v23990-p430-f-01-1 4 output inverter figure 5. typical switching energy losses figure 6. typical switching energy losses as a function of collector current as a function of gate resistor output inverter igbt output inverter igbt e = f (ic) e = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v rgon= 18 ic = 50 a rgoff= 18 figure 7. typical switching times as a figure 8. typical switching times as a function of collector current function of gate resistor output inverter igbt output inverter igbt t = f (ic) t = f (r g ) inductive load, tj = 125 c inductive load, tj = 125 c v ce = 600 v v ce = 600 v v ge = 15 v v ge = 15 v rgon= 18 ic = 50 a rgoff= 18 t doff t f t don t r 0,001 0,01 0,1 1 0 20406080100 ic (a) t ( s) e off e on erec 0 2 4 6 8 10 0 2 04 06 08 01 0 0 i c (a) e (mws) e off e on erec 0 2 4 6 8 10 0 1020304050 r g ( ) e (mws) t doff t f t don t r 0,001 0,01 0,1 1 0 1 02 03 04 05 0 r g ( ) t ( s) copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn power.switches@tycoelectronics.com copyright by vincotech revision:1
V23990-P430-F-PM final datasheet flowpack 1, 1200v, 50 a v23990-p430-f-01-1 4 output inverter figure 9. typical reverse recovery time as a figure 10. typical reverse recovery current as a function of igbt turn on gate resistor function of igbt turn on gate resistor output inverter fred diode output inverter fred diode t rr = f (rgon) i rrm = f (rgon) tj = 125 c tj = 125 c v r = 600 v v r = 600 v i f = 50 a i f = 50 a v ge = 15 v v ge = 15 v figure 11. typical reverse recovery charge as a figure 12. typical rate of fall of forward function of igbt turn on gate resistor and reverse recovery current as a output inverter fred diode function of igbt turn on gate resistor q rr = f (rgon) output inverter fred diod e di0/dt,direc/dt = f (rgon) tj = 125 c tj = 125 c v r = 600 v v r = 600 v i f = 50 a i f = 50 a v ge = 15 v v ge = 15 v 0 0,02 0,04 0,06 0,08 0,1 0 1 02 03 04 05 0 r gon ( ) t rr ( s) 0 25 50 75 100 125 150 175 0 1 02 03 04 05 0 r gon ( ) irr m (a) 0 2 4 6 8 10 12 0 1 02 03 04 05 0 r gon ( ) q rr ( c) di0/dt direc/dt 0 800 1600 2400 3200 4000 4800 5600 6400 7200 8000 0 1 02 03 04 05 0 r gon ( ) di rec / dt (a/ s) copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn power.switches@tycoelectronics.com copyright by vincotech revision:1
V23990-P430-F-PM final datasheet flowpack 1, 1200v, 50 a v23990-p430-f-01-1 4 output inverter figure 13. igbt transient thermal impedance figure 14. fred transient thermal impedance as a function of pulse width as a function of pulse width z th jh = f(tp) z th jh = f(tp) parameter: d = tp / t rthjh = 1,04 k/w parameter: d = tp / t rthjh = 1,72 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,07 5,2e+00 0,04 2,1e+01 0,28 7,1e-01 0,25 1,1e+00 0,50 1,9e-01 0,76 2,0e-01 0,12 2,0e-02 0,41 3,4e-02 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 t p (s) z thjh (k/w) d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -5 copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn power.switches@tycoelectronics.com copyright by vincotech revision:1
V23990-P430-F-PM final datasheet flowpack 1, 1200v, 50 a v23990-p430-f-01-1 4 output inverte r figure 15. power dissipation as a figure 16. collector current as a function of heatsink temperatur e function of heatsink temperatur e output inverter igbt output inverter igbt p tot = f (th) i c = f (th) parameter: tj = 150 c parameter: tj = 150 c v ge = 15 v figure 17. power dissipation as a figure 18. forward current as a function of heatsink temperatur e function of heatsink temperatur e output inverter fre d output inverter fre d p tot = f (th) i f = f (th) parameter: tj = 150 c parameter: tj = 150 c 0 20 40 60 80 100 120 140 160 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i c (a) 0 20 40 60 80 100 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i f (a) copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn power.switches@tycoelectronics.com copyright by vincotech revision:1
V23990-P430-F-PM final datasheet flowpack 1, 1200v, 50 a v23990-p430-f-01-1 4 thermistor figure 37. typical ntc characteristic as a function of temperature r t = f (t) ntc-typical temperature characteristic 0 1.000 2.000 3.000 4.000 5.000 25 50 75 100 125 t (c) r() copyright by tyco electronics finsinger feld 1, d-85521 ottobrunn power.switches@tycoelectronics.com copyright by vincotech revision:1
|
